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IRFHM4231TRPBF - Power MOSFET

General Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape

Key Features

  • Low Charge (typical 9.7nC) Low RDSon (.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 3.4 4.6 9.7 40 V m nC A Applications Control MOSFET for synchronous buck converter   FastIRFET™ IRFHM4231TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low Charge (typical 9.7nC) Low RDSon (<3.4m) Low Thermal Resistance to PCB (<4.3°C/W) Low Profile (<0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM4231PbF Package Type   PQFN 3.3mm x 3.