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International Rectifier Electronic Components Datasheet

IRFHM4231TRPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
3.4
4.6
9.7
40
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
 
FastIRFET™
IRFHM4231TRPbF
HEXFET® Power MOSFET
 
PQFN 3.3 x 3.3 mm
Features
Low Charge (typical 9.7nC)
Low RDSon (<3.4m)
Low Thermal Resistance to PCB (<4.3°C/W)
Low Profile (<0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM4231PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM4231TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
22
72
46
40
288
2.7
29
0.021
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
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June 5, 2014


International Rectifier Electronic Components Datasheet

IRFHM4231TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM4231TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
22
2.7
3.7
1.6
-5.4
–––
–––
–––
–––
20
9.7
1.9
1.2
3.6
3.0
4.8
9.6
1.4
8.7
28
12
5.9
1270
360
97
 
Typ.
–––
–––
 
Min. Typ.
––– –––
––– –––
––– –––
––– 16
––– 13
    
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
3.4 mVGS = 10V, ID = 30A
4.6 VGS = 4.5V, ID = 30A
2.1 V VDS = VGS, ID = 35µA
––– mV/°C
1.0 µA
100 nA
-100
––– S
––– nC
15
–––  
––– nC
–––  
–––  
–––  
––– nC
–––  
–––
––– ns
–––  
–––  
–––
––– pF
–––  
VDS = 20V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 10V, ID = 30A
VGS = 10V, VDS = 13V, ID = 30A
VDS = 13V
VGS = 4.5V
ID = 30A
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 30A
RG=1.8
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
  
Max.
42
30
 
Units
mJ
A
    
Max. Units
Conditions
40A MOSFET symbol
showing the
288
integral reverse
G
p-n junction diode.
D
S
1.0 V TJ = 25°C, IS = 30A, VGS = 0V
24 ns TJ = 25°C, IF = 30A, VDD = 13V
20 nC di/dt = 280A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
4.3
37
47
31
 
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014


Part Number IRFHM4231TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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