Download IRFHM830PBF Datasheet PDF
IRFHM830PBF page 2
Page 2
IRFHM830PBF page 3
Page 3

Datasheet Summary

RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) (@Tc(Bottom) = 25°C) 30 V 3.8 mΩ 15 nC 2.5 Ω 40h A Applications - Battery Operated DC Motor Inverter MOSFET HEXFET® Power MOSFET 3.3mm x 3.3mm PQFN Features and Benefits Features Low RDSon (<3.8mΩ) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (<1.0mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1,Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing...