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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
3.8 mΩ 15 nC 2.5 Ω
40h A
Applications • Battery Operated DC Motor Inverter MOSFET
IRFHM830PbF
HEXFET® Power MOSFET
3.3mm x 3.3mm PQFN
Features and Benefits
Features Low RDSon (<3.8mΩ) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (<1.
IRFHM830PBF Datasheet
