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IRFHM830DTRPbF - HEXFET Power MOSFET

Download the IRFHM830DTRPbF datasheet PDF. This datasheet also covers the IRFHM830DPbF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFHM830DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFHM830DPbF HEXFET Power MOSFET
IRFHM830PBF Power MOSFET
IRFHM831PBF HEXFET Power MOSFET
IRFHM8326PBF Power MOSFET
IRFHM8329PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.