IRFHM830DTRPbF Datasheet | International Rectifier

IRFHM830DPb F HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ n C Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications - Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.0mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification results in ⇒ Increased Power Density Increased Reliability Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHM830DTRPb F IRFHM830DTR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #...