IRFHM830PBF Datasheet | International Rectifier

RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) (@Tc(Bottom) = 25°C) 30 V 3.8 mΩ 15 n C 2.5 Ω 40h A Applications - Battery Operated DC Motor Inverter MOSFET IRFHM830Pb F HEXFET® Power MOSFET 3.3mm x 3.3mm PQFN Features and Benefits Features Low RDSon (<3.8mΩ) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (<1.0mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1,Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRFHM830TRPBF IRFHM830TR2PBF PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and...