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IRFHM831PBF - HEXFET Power MOSFET

Key Features

  • Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFHM831PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 7.8 m: 7.3 nC 0.5 : 40h A PQFN 3.3mm x 3.3mm Applications • Control MOSFET for Buck Converters Features and Benefits Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (<4.7°C/W) 100% Rg tested Low Profile (<1.