IRFHM831PBF Datasheet | International Rectifier

IRFHM831Pb F HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) (@Tc(Bottom) = 25°C) 30 V 7.8 m: 7.3 n C 0.5 : 40h A PQFN 3.3mm x 3.3mm Applications - Control MOSFET for Buck Converters Features and Benefits Features Low Charge (typical 7.3n C) Low Thermal Resistance to PCB (<4.7°C/W) 100% Rg tested Low Profile (<1.0mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Switching Losses Enable Better Thermal Dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHM831TRPb F IRFHM831TR2Pb F Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and...