IRFHM8334TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
44
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qos s
Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
t d(of f )
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
EAS Single Pulse Avalanche Energy
Diode Characteristics
Parameter
Min.
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
–––
–––
–––
–––
–––
RθJC (Bottom)
RθJC (Top)
RθJ A
RθJA (<10s)
eJunction-to-Case
eJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient
Parameter
Typ.
–––
21
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
14
7.0
4.6
1180
260
110
Typ.
–––
–––
–––
13
19
Max.
–––
–––
9.0
13.5
2.35
–––
1.0
150
100
-100
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1.0mA
dmΩ VGS = 10V, ID = 20A
dVGS = 4.5V, ID = 16A
V VDS = VGS, ID = 25μA
mV/°C
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
VDS = 15V
nC VGS = 4.5V
ID = 20A
nC VDS = 16V, VGS = 0V
Ω
VDD = 30V, VGS = 4.5V
ns ID = 20A
RG=1.8Ω
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Typ.
Max.
35
Units
mJ
Max.
25h
176
1.0
20
29
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
S
p-n junction diode.
dV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
dÃnC di/dt = 380 A/μs
Typ.
–––
–––
–––
–––
Max.
4.5
44
47
30
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014
