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International Rectifier Electronic Components Datasheet

IRFHM8334TRPBF Datasheet

Power MOSFET

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VDS
VGS max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
9.0
13.5
7.1
25h
V
V
m:
nC
A
Applications
Control MOSFET for high frequency buck converters
Features
Low Thermal Resistance to PCB (< 4.5°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
IRFHM8334TRPbF
HEXFET® Power MOSFET
PQFN 3.3 X 3.3 mm
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFHM8334PBF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8334TRPBF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Pulsed Drain Current
fPower Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
13
43gh
27gh
25h
176
2.7
28
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014


International Rectifier Electronic Components Datasheet

IRFHM8334TRPBF Datasheet

Power MOSFET

No Preview Available !

IRFHM8334TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
44
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qos s
Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
t d(of f )
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
™EAS Single Pulse Avalanche Energy
Diode Characteristics
Parameter
Min.
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
–––
–––
–––
–––
–––
RθJC (Bottom)
RθJC (Top)
RθJ A
RθJA (<10s)
eJunction-to-Case
eJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient
Parameter
Typ.
–––
21
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
14
7.0
4.6
1180
260
110
Typ.
–––
–––
–––
13
19
Max.
–––
–––
9.0
13.5
2.35
–––
1.0
150
100
-100
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1.0mA
dmΩ VGS = 10V, ID = 20A
dVGS = 4.5V, ID = 16A
V VDS = VGS, ID = 25μA
mV/°C
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
VDS = 15V
nC VGS = 4.5V
ID = 20A
nC VDS = 16V, VGS = 0V
Ω
VDD = 30V, VGS = 4.5V
ns ID = 20A
RG=1.8Ω
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Typ.
Max.
35
Units
mJ
Max.
25h
176
1.0
20
29
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
S
p-n junction diode.
dV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 380 A/μs
Typ.
–––
–––
–––
–––
Max.
4.5
44
47
30
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014


Part Number IRFHM8334TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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