IRFHM8337TRPBF Description
IRFHM8337TRPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 30 12.4 17.9 5.4 18 nC A V m D 5 D 6 D 7 D 8 Top View 4 G 3 S 2 S 1 S PQFN 3.3 x 3.3 mm Applications System/load switch, Charge or.