900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRFHM8337TRPBF Datasheet

Power MOSFET

No Preview Available !

VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
30
12.4
17.9
5.4
18
V
m
nC
A
Applications
System/load switch,
Charge or discharge switch for battery protection
Features
Low Thermal Resistance to PCB (< 5.0°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer Qualification
  Top View
 
D5
D6
D7
D8
4G
3S
2S
1S
IRFHM8337TRPbF
HEXFET® Power MOSFET
 
PQFN 3.3 x 3.3 mm
Benefits
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM8337PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8337TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
 
Max.
± 20
12
9.4
94
35
22
18
2.8
25
0.02
-55 to + 150
 
Units
V
A 
W
W/°C
°C
August 21, 2013
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFHM8337TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM8337TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
BVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
  
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current  
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
0.02
9.4
14.5
1.8
-6.2
–––
–––
–––
–––
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
2.0
9.0
11
9.9
5.6
755
171
83
  
 
Max. Units
Conditions
–––
–––
12.4
17.9
2.35
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m 
VGS = 10V, ID = 12A
VGS = 4.5V, ID =9.4A
V
mV/°C
VDS = VGS, ID = 25µA
1.0
150
100
-100
–––
8.1
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V,TJ = 125°C
µA VGS = 20V
VGS =-20 V
S VDS = 15V, ID = 9.4A
–––  
––– nC
–––  
–––  
VDS = 15V
VGS = 4.5V
ID = 9.4A
–––  
––– nC VDS = 16V, VGS = 0V
–––  
––– VDD = 15V, VGS = 4.5V
––– ns ID = 9.4A
–––  
–––  
RG= 1.3
–––
––– pF
–––  
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Typ.
–––
 
Max.
13
 
Units
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
20
27
  
 
Max. Units
Conditions
18
94
MOSFET symbol
A 
showing the
integral reverse
G
D
p-n junction diode.
S
1.0 V TJ = 25°C, IS = 9.4A, VGS = 0V 
30 ns TJ = 25°C, IF = 9.4A, VDD = 15V
41 nC di/dt = 200A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
5.0
50
45
31
 
Units
°C/W
2 www.irf.com © 2013 International Rectifier
August 21, 2013
Free Datasheet http://www.Datasheet4U.com


Part Number IRFHM8337TRPBF
Description Power MOSFET
Maker International Rectifier
PDF Download

IRFHM8337TRPBF Datasheet PDF





Similar Datasheet

1 IRFHM8337TRPBF Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy