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International Rectifier Electronic Components Datasheet

IRFHM9331PBF Datasheet

HEXFET Power MOSFET

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VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-30
14.6
32
-11
V
mΩ
nC
A
IRFHM9331PbF
HEXFET® Power MOSFET
S
5D G4 D
6D S 3 D
7D S 2 D
S
S
G
8D S 1
D
3mm x 3mm PQFN
Applications
l System/load switch
Features and Benefits
Features
Low Thermal Resistance to PCB (<6.0°C/W)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM9331TRPbF
IRFHM9331TR2PbF
Package Type
PQFN 3mm x 3mm
PQFN 3mm x 3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ -10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 25
-11
-9
i-24
-24
-90
2.8
1.8
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 2
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013


International Rectifier Electronic Components Datasheet

IRFHM9331PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFHM9331PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
VGS(th)
Gate Threshold Voltage
-1.3
ΔVGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
hQg Total Gate Charge
hQg Total Gate Charge
hQgs Gate-to-Source Charge
hQgd Gate-to-Drain Charge
hRG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
Min.
IS Continuous Source Current
(Body Diode)
–––
ISM Pulsed Source Current
Ù(Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
Thermal Resistance
–––
Parameter
gRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Typ.
–––
0.02
10.0
11.7
-1.8
-5.1
–––
–––
–––
–––
–––
16
32
4.4
8
16
11
27
72
60
1543
310
208
Typ.
–––
–––
–––
64
25
Max.
–––
–––
–––
14.6
-2.4
–––
-1.0
-150
-10
10
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V/°C
mΩ
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
eVGS = -20V, ID = -11A
eVGS = -10V, ID = -11A
V
mV/°C
μA
μA
S
nC
nC
VDS = VGS, ID = -25μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -25V
VGS = 25V
VDS = -10V, ID = -9.0A
VDS = -15V,VGS = -4.5V,ID = - 9.0A
VGS = -10V
VDS = -15V
ID = -9.0A
Ω
eVDD = -15V, VGS = -4.5V
ns
ID = -1.0A
RG = 6.8Ω
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Typ.
–––
–––
Max.
76
-9.0
Units
mJ
A
Max.
-2.8
-90
-1.2
96
38
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
eTJ = 25°C, IS = -2.8A, VGS = 0V
TJ = 25°C, IF = -2.8A, VDD = -24V
edi/dt = 100/μs
Typ.
–––
–––
Max.
6
45
30
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.904mH, RG = 50Ω, IAS = -9A.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
‡ Current limited by package.
.
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013


Part Number IRFHM9331PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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International Rectifier





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