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International Rectifier Electronic Components Datasheet

IRFHS8342PBF Datasheet

HEXFET Power MOSFET

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VDS
VGS max
RDS(on) max
(@VGS = 10V)
Qg(typical)
(@VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
30
±20
16.0
4.2
d8.5
V
V
mΩ
nC
A
Applications
Control MOSFET for Buck Converters
System/Load Switch
Features and Benefits
Features
Low RDSon (16.0mΩ)
Low Thermal Resistance to PCB (13°C/W)
Low Profile (1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFHS8342PbF
T OP VIEW
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
results in
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS8342TRPbF
IRFHS8342TR2PbF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom)= 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
±20
d8.8
7.1
19d
15d
d8.5
76
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through … are on page 2
1 www.irf.com © 2013 International Rectifier
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December 17, 2013


International Rectifier Electronic Components Datasheet

IRFHS8342PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFHS8342PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒ VDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
gJunction-to-Case
Parameter
gJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient (<10s)
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250μA
––– 22 ––– mV/°C Reference to 25°C, ID = 1mA
ed––– 13
e––– 20
16
25
mΩ
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6.8A
1.35
–––
1.8
-5.8
2.35
–––
V
mV/°C
VDS
= VGS, ID =
25μA
–––
–––
–––
–––
1.0
150
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
d18 ––– ––– S VDS = 10V, ID = 8.5A
d––– 4.2 ––– nC VGS = 4.5V, VDS = 15V, ID = 8.5A
––– 8.7 –––
VDS = 15V
d––– 1.5 ––– nC VGS = 10V
––– 1.3 –––
ID = 8.5A (See Fig. 6 & 16)
––– 3.0 ––– nC VDS = 16V, VGS = 0V
––– 1.9 ––– Ω
e––– 5.9 –––
VDD = 15V, VGS = 4.5V
d–––
–––
15
5.2
–––
–––
ns
ID = 8.5A
RG=1.8Ω
––– 5.0 –––
See Fig.17
––– 600 –––
VGS = 0V
––– 100 ––– pF VDS = 25V
––– 46 –––
ƒ = 1.0MHz
Min. Typ. Max. Units
Conditions
d––– ––– 8.5
MOSFET symbol
D
––– ––– 76
A
showing the
integral reverse
p-n junction diode.
G
S
d e––– ––– 1.0
V TJ = 25°C, IS = 8.5A , VGS = 0V
d––– 11 17 ns TJ = 25°C, IF = 8.5A , VDD = 15V
––– 13 20 nC di/dt = 330A/μs
Time is dominated by parasitic Inductance
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board
… Rθ is measured at TJ of approximately 90°C.
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 17, 2013


Part Number IRFHS8342PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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