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IRFHS8342 - Power MOSFET

This page provides the datasheet information for the IRFHS8342, a member of the IRFHS8342PBF Power MOSFET family.

Datasheet Summary

Features

  • Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification IRFHS8342PbF HEXFET® Power MOSFET T OP VIEW D1 D2 G3 6D D 5D S 4S D D D G D D S S 2mm x 2mm PQFN results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally F.

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VDS VGS max RDS(on) max (@VGS = 10V) Qg(typical) (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 30 V ±20 V 16.0 mΩ 4.2 nC d 8.5 A Applications • Control MOSFET for Buck Converters • System/Load Switch Features and Benefits Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.
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