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IRFHS8342 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: VDS VGS max RDS(on) max (@VGS = 10V) Qg(typical) (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 30 V ±20 V 16.0 mΩ 4.2 nC d 8.

Download the IRFHS8342 datasheet PDF. This datasheet also includes the IRFHS8342PBF variant, as both parts are published together in a single manufacturer document.

Key Features

  • Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification IRFHS8342PbF HEXFET® Power MOSFET T OP VIEW D1 D2 G3 6D D 5D S 4S D D D G D D S S 2mm x 2mm PQFN results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally F.