IRFHS8342PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: VDS VGS max RDS(on) max (@VGS = 10V) Qg(typical) (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 30 ±20 16.0 4.2 d8.

Datasheet Details

Part number	IRFHS8342PBF
Manufacturer	International Rectifier (now Infineon)
File Size	245.49 KB
Description	Power MOSFET
Download	IRFHS8342PBF Download (PDF)

Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification IRFHS8342PbF T OP VIEW HEXFET® Power MOSFET D1 D2 G3 6D D 5D S 4S D D DG D D S S 2mm x 2mm PQFN results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendli.