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International Rectifier Electronic Components Datasheet

IRFHS9351PBF Datasheet

HEXFET Power MOSFET

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www.DataSheet.co.kr
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TC = 25°C)
-30
±20
170
d-3.4
V
V
mΩ
A
PD - 97572B
IRFHS9351PbF
HEXFET® Power MOSFET
T OP VIEW
S1 1
G1 2
D2 3
D1
FET1
6 D1
5 G2
D2
FET2
4 S2
D1
G2
S2
D2
D1
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low RDSon (170mΩ)
Low Thermal Resistance to PCB (19°C/W)
Low Profile (1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9351TRPBF
IRFHS9351TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 2
www.irf.com
Max.
-30
± 20
-2.3
-1.5
d-5.1
d-4.1
d-3.4
-20
1.4
0.9
0.01
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
7/27/11
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

IRFHS9351PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

www.DataSheet.co.kr
IRFHS9351PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
B VDSS
VDSS/ TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
V GS(th )
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1. 3
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Qg
Qg
Qgs
Qgd
RG
td(on )
tr
td(off )
Forward Transconductance
hTotal Gate Charge
hTotal Gate Charge
hGate-to-Source Charge
hGate-to-Drain Charge
hGate R esistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
2. 4
–––
–––
–––
–––
–––
–––
–––
–––
tf Fall Time
Ciss Input Capacitance
–––
–––
Coss Output Capacitance
Crss Reverse Transfer C apacitance
–––
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
R JC (Bottom)
R JC (Top)
R JA
R JA
Parameter
gJu nc tio n-to-Cas e
gJu nc tio n-to-Cas e
fJu nc tio n-to-Ambi ent
fJunction-to-Ambient (t<10s)
Min.
–––
–––
–––
–––
–––
Typ.
–––
0. 02
135
235
-1.8
-4.6
–––
–––
–––
–––
–––
1. 9
3. 7
0. 6
1. 1
17
8. 3
30
6. 3
7. 9
160
39
26
Typ.
–––
–––
–––
20
42
Max.
–––
–––
170
290
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/ °C
m
V
mV /°C
μA
nA
S
nC
nC
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
eVGS = -10V, ID = -3.1A
eVGS = -4.5V, ID = -2.5A
VDS = VGS, ID = -10μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -3.1A
VDS = -15V,VGS = -4.5V,ID = - 3.1A
VGS = -10V
VDS = -15V
ID = -3.1A
eVDD = -15V, VGS = -4.5V
ns ID = -3.1A
RG = 1.8
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Max.
-5.1
-20
-1.2
30
63
Units
Conditions
MOSFET symbol
D
showing the
A integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = -3.1A, VG S = 0V
ns TJ = 25°C, IF = -3.1A, VDD = -15V
enC di/dt = 370/μs
Typ.
–––
–––
–––
M ax.
19
1 70
90
75
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package. .
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
.
2
www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IRFHS9351PBF
Description HEXFET Power MOSFET
Maker International Rectifier
PDF Download

IRFHS9351PBF Datasheet PDF






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International Rectifier





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