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International Rectifier Electronic Components Datasheet

IRFI1310NPBF Datasheet

Power MOSFET

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l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtĠ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 94873
IRFI1310NPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.036
S ID = 24A
TO-220 FULLPAK
Max.
24
17
140
56
0.37
± 20
420
22
5.6
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.7
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
12/9/03


International Rectifier Electronic Components Datasheet

IRFI1310NPBF Datasheet

Power MOSFET

No Preview Available !

IRFI1310NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
C Drain to Sink Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA†
––– ––– 0.036 VGS = 10V, ID = 13A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
14 ––– ––– S VDS = 25V, ID = 22A†
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 120
ID = 22A
––– ––– 15 nC VDS = 80V
––– ––– 58
––– 11 –––
VGS = 10V, See Fig. 6 and 13 „†
VDD = 50V
–––
–––
56 –––
45 –––
ns
ID = 22A
RG = 3.6
––– 40 –––
RD = 2.9Ω, See Fig. 10 „†
––– 4.5 –––
Between lead,
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
D
S
––– 1900 –––
VGS = 0V
––– 450 ––– pF VDS = 25V
––– 230 –––
ƒ = 1.0MHz, See Fig. 5†
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 140
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 180 270
V TJ = 25°C, IS = 13A, VGS = 0V „
ns TJ = 25°C, IF = 22A
––– 1.2 1.8 µC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 180A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRF1310N data and test conditions


Part Number IRFI1310NPBF
Description Power MOSFET
Maker International Rectifier
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