F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.ir.

Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 5.5mΩ G S ID = 130A‡ Description Advanced HEXFET® Power MOSFE.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRFP064V

IRFP064

IRFP064N

IRFP064NPBF

IRFP040

IRFP042

IRFP044

IRFP044N

IRFP044NPbF

IRFP044PbF

IRFP048

IRFP048N

IRFP048NPbF