Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- 1.5 0 (.05 9) 4
2X
5.50 (.21 7) 4.50 (.17 7)
N O TES : 1 DIM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 1 98 2. 2 CO N TR O LL IN G DIM EN S IO N : IN CH . 3 CO N F O RM S TO JED E C O U TLINE TO -2 47 -A C . 2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.2 15) 2X
1.4 0 (.0 56) 3 X 1.0 0 (.0 39) 0.2 5 (.0 10) M 3 .40 (.133 ) 3 .00 (.118 ) C A S
0.80 (.03 1) 3X 0.40 (.01 6) 2.60 (.1 02) 2.20 (.0 87)
Part Marking Information
TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0 W IT H A S.
IRFP140N_InternationalRectifier.pdf
