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International Rectifier Electronic Components Datasheet

IRFP140N Datasheet

Power MOSFET

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HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 91343B
IRFP140N
D
VDSS = 100V
G RDS(on) = 0.052
S ID = 33A
TO-247AC
Max.
33
23
110
140
0.91
±20
300
16
14
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
1.1
––––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/5/98


International Rectifier Electronic Components Datasheet

IRFP140N Datasheet

Power MOSFET

No Preview Available !

IRFP140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––––––
–––
–––
–––
Typ. Max. Units
––– ––– V
0.11 ––– V/°C
––– 0.052
––– 4.0 V
––– ––– S
––– 25
µA
––– 250
––– 100
nA
––– -100
––– 94
––– 15 nC
––– 43
8.2 –––
39 –––
44 ––– ns
33 –––
5.0 –––
13 ––––––
1400 –––
330 –––
170 –––
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA…
VGS = 10V, ID = 16A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 16A…
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 16A
VDS = 80V
VGS = 10V, See Fig. 6 and 13 „…
VDD = 50V
ID = 16A
RG = 5.1
RD = 3.0Ω, See Fig. 10 „…
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5…
G
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 33
––– 110
––– 1.3
170 250
1.1 1.6
Units
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V „
TJ = 25°C, IF = 16A
di/dt = 100A/µs „…
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 2.0mH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD 16A, di/dt 210A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRF540N data and test conditions.
D
S
2 www.irf.com


Part Number IRFP140N
Description Power MOSFET
Maker International Rectifier
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IRFP140N Datasheet PDF






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