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IRFP140N - Power MOSFET

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • 1.5 0 (.05 9) 4 2X 5.50 (.21 7) 4.50 (.17 7) N O TES : 1 DIM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 1 98 2. 2 CO N TR O LL IN G DIM EN S IO N : IN CH . 3 CO N F O RM S TO JED E C O U TLINE TO -2 47 -A C . 2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.2 15) 2X 1.4 0 (.0 56) 3 X 1.0 0 (.0 39) 0.2 5 (.0 10) M 3 .40 (.133 ) 3 .00 (.118 ) C A S 0.80 (.03 1) 3X 0.40 (.01 6) 2.60 (.1 02) 2.20 (.0 87) Part Marking Information TO-247AC E X A M P L E : TH IS IS A N IR F P E 3 0 W IT H A S.

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PD - 91343B IRFP140N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.052Ω ID = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
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