ver same type as D.U.T.
* ISD controlled by Duty Factor "D"
* D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D..

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

IRFP150

IRFP150A

IRFP150FI

IRFP150M

IRFP150MPBF

IRFP150MPbF

IRFP150NPBF

IRFP150R

IRFP150V

IRFP150VPBF

IRFP151

IRFP151R

IRFP152