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IRFPC60LC-P Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.

Overview

PD - 99438 HEXFET® Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V G S RDS(on) = 0.

Key Features

  • 59 ) 4 1 5.9 0 (.6 26 ) 1 5.3 0 (.6 02 ) -B - 2X 5.50 (.2 1 7) 4.50 (.1 7 7) NO TE S: 1 DIM EN SION ING & TO LER AN CING P ER A N SI Y14.5M , 1982. 2 CON TR OLLIN G D IM EN SIO N : IN CH . 3 CON F OR M S TO JED E C OU TLIN E TO-247-A C . 2 .40 (.0 94 ) 2 .00 (.0 79 ) 2X 5.45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0.2 5 (.01 0) M 3 .40 (.1 33 ) 3 .00 (.1 18 ) C A S 0 .8 0 (.0 31 ) 3X 0 .4 0 (.0 16 ) 2.60 (.10 2) 2.20 (.08 7) TO-247AC Part Marking Information E X A M P L E : T H I.

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