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IRFU9120N Datasheet - International Rectifier

Power MOSFET

IRFU9120N Features

* R A IN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 2.28 (.090) 4.57 (.180) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) N O TE S : 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F

IRFU9120N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFU9120N Datasheet (117.52 KB)

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Datasheet Details

Part number:

IRFU9120N

Manufacturer:

International Rectifier

File Size:

117.52 KB

Description:

Power mosfet.
PD - 9.1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead.

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IRFU9120N Power MOSFET International Rectifier

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