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IRFR9110, IRFU9110
Data Sheet July 1999 File Number
4001.3
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs
These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541.
Features
• 3.1A, 100V • rDS(ON) = 1.
IRFU9110 Datasheet
