Datasheet Details
| Part number | IRFZ24L |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 490.20 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRFZ24L Datasheet
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| Part number | IRFZ24L |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 490.20 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
IRFZ24L Datasheet
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Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
www.DataSheet4U.com PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFZ24L | Power MOSFET | Vishay |
 |
IRFZ24 | Power MOSFET | Fairchild Semiconductor |
|
IRFZ24 | Power MOSFET | Vishay |
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IRFZ24A | ADVANCED POWER MOSFET | Fairchild Semiconductor |
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IRFZ24N | N-channel enhancement mode TrenchMOS transistor | NXP |
| Part Number | Description |
|---|---|
| IRFZ24 | Power MOSFET |
| IRFZ24N | Power MOSFET |
| IRFZ24NL | Power MOSFET |
| IRFZ24NLPBF | HEXFET Power MOSFET |
| IRFZ24NPBF | Power MOSFET |
| IRFZ24NS | Power MOSFET |
| IRFZ24NSPBF | HEXFET Power MOSFET |
| IRFZ24S | HEXFET Power MOSFET |
| IRFZ24V | Power MOSFET |
| IRFZ24VL | HEXFET Power MOSFET |