Description
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of app
Features
- bF
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 0 2, 2000 IN T H E AS S E MB L Y L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R F 53 0S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L
OR
INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S.