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IRFZ24NSPBF - HEXFET Power MOSFET

Download the IRFZ24NSPBF datasheet PDF (IRFZ24NLPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • bF D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 0 2, 2000 IN T H E AS S E MB L Y L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R F 53 0S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ24NLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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  • IRFZ24N - N-channel enhancement mode TrenchMOS transistor (NXP)
  • IRFZ24N - Power MOSFET (ART CHIP)
  • IRFZ24N - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFZ24NL - Power MOSFET (TRANSYS)
  • IRFZ24NLPbF - N-Channel MOSFET (INCHANGE)
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Other Datasheets by International Rectifier

Full PDF Text Transcription

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www.DataSheet4U.com PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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