IRFZ48RL Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRFZ48RL hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFZ48RL
Manufacturer	International Rectifier (now Infineon)
File Size	201.74 KB
Description	HEXFET Power MOSFET
Download	IRFZ48RL Download (PDF)

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

www.DataSheet4U.com The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Overview

PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D RDS(on) = 0.

Key Features

D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 13.50 (.5 32) 12.80 (.5 04) 27.40 (1.079 ) 23.90 (.9 41) 4 3 3 0.0 0 (14 .1 73 ) MAX. 6 0.00 (2 .36 2) M IN . NOTES : 1 . C O M F O R M S T O E IA -4.

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