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IRFZ48RS Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRFZ48RS datasheet PDF. This datasheet also includes the IRFZ48RL variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ48RL_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

www.DataSheet4U.com The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Overview

PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D RDS(on) = 0.

Key Features

  • D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 13.50 (.5 32) 12.80 (.5 04) 27.40 (1.079 ) 23.90 (.9 41) 4 3 3 0.0 0 (14 .1 73 ) MAX. 6 0.00 (2 .36 2) M IN . NOTES : 1 . C O M F O R M S T O E IA -4.