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IRG4BH20K-S - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations.
  • Industry standard D2Pak package Benefits.
  • As a Freewheeling Diode we recommend our.

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PD -93960 IRG4BH20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard D2Pak package Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.