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IRG4BH20K-SPbF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations.
  • Industry standard D2Pak package.
  • Lead-Free C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.0A Benefits.
  • As a Fr.

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PD -95891 IRG4BH20K-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard D2Pak package • Lead-Free C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.