IRG4BH20K-S Description
PD -93960 IRG4BH20K-S INSULATED GATE BIPOLAR TRANSISTOR.
IRG4BH20K-S Key Features
- High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V
- bines low conduction losses with high switching speed
- Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
- Industry standard D2Pak package
- As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switchi
- Latest generation 4 IGBT's offer highest power density motor controls possible