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IRG4BC10KD - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

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www.DataSheet4U.com PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.