IRG4BC10SD-LPBF
IRG4BC10SD-LPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
- Extremely low voltage drop 1.1Vtyp. @ 2A
- S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
- Very Tight Vce(on) distribution
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard D2Pak & TO-262 packages
- Lead-Free
Standard Speed Co Pack IGBT
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A n-channel
Benefits
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
- Lower losses than MOSFET's conduction and Diode losses
D2Pak IRG4BC10SD-S Max.
600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150
TO-262 IRG4BC10SD-L Units
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
V W °C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA RθJA Wt
Min.
Typ.
- -
- -
- - 0.50
- -
- -
- -...
