IRG4BC10SD-LPBF Overview
PD - 95780 IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4BC10SD-LPBF Key Features
- Extremely low voltage drop 1.1Vtyp. @ 2A
- S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drive
- Very Tight Vce(on) distribution
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard D2Pak & TO-262 packages
- Lead-Free
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
- Lower losses than MOSFET's conduction and Diode losses