Datasheet4U Logo Datasheet4U.com

IRG4BC10SD-S - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG4BC10SD-S datasheet PDF. This datasheet also covers the IRG4BC10SD-L variant, as both devices belong to the same (irg4bc10sd-l/-s) insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Extremely low voltage drop 1.1Vtyp. @ 2A.
  • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
  • Very Tight Vce(on) distribution.
  • IGBT co-packaged with.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG4BC10SD-L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC10SD-SPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak & TO-262 packages C IRG4BC10SD-S IRG4BC10SD-L Standard Speed CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .