IRG4BC10SD-S - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG4BC10SD-S, a member of the IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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Datasheet Details

Part number	IRG4BC10SD-S
Manufacturer	International Rectifier
File Size	243.53 KB
Description	(IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC10SD-S Datasheet
Additional preview pages of the IRG4BC10SD-S datasheet.

IRG4BC10SD-S Product details

Features

Extremely low voltage drop 1.1Vtyp. @ 2A.
S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
Very Tight Vce(on) distribution.
IGBT co-packaged with.

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Published: Feb 22, 2007 |