IRG4BC10SD-S Datasheet | International Rectifier

Features - Extremely low voltage drop 1.1Vtyp. @ 2A - S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. - Very Tight Vce(on) distribution - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard D2Pak & TO-262 packages IRG4BC10SD-S IRG4BC10SD-L Standard Speed Co Pack IGBT VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-ch an nel Benefits - Generation 4 IGBT's offer highest efficiencies available - IGBT's optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing - Lower losses than MOSFET's conduction and Diode losses D2Pak IRG4BC10SD-S Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 TO-262 IRG4BC10SD-L Units Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Min. Typ. - - - - - - 0.50 - - - - - -...