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IRG4BC10S - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Extremely low voltage drop; 1.1V typical at 2A.
  • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR
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www.DataSheet4U.com PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications • Very Tight Vce(on) distribution • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.