IRG4BC10S
IRG4BC10S is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
- Extremely low voltage drop; 1.1V typical at 2A
- S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications
- Very Tight Vce(on) distribution
- Industry standard TO-220AB package
Standard Speed IGBT
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A n-channel
Benefits
- Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
- Lower conduction losses than many Power MOSFET''s
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PDTC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 14 8.0 18 18 ± 20 110 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units
A m J
W °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
- -
- 0.5
- -
- 2.0(0.07)
Max.
- -
- 50
- -
- Units
°C/W g...
