IRG4BC10SDPBF Datasheet | International Rectifier

Features Standard Speed Co Pack IGBT VCES = 600V - Extremely low voltage drop 1.1Vtyp. @ 2A - S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. - Very Tight Vce(on) distribution - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-220AB package - Lead-Free - Generation 4 IGBTs offer highest efficiencies available - IGBTs optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing - Lower losses than MOSFET's conduction and Diode losses Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits TO-220AB Absolute Maximum Ratings Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Units V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. - - - - - - - - - - - - -...