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IRG4BC10KDPBF Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

  • C Short Circuit Rated UltraFast IGBT VCES = 600V.
  • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10K Short Circuit Rated UltraFast IGBT
IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-S (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-SPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10UD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15MD INSULATED GATE BIPOLAR TRANSISTOR

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