IRG4BC10KDPBF
IRG4BC10KDPBF is HEXFET Power MOSFET manufactured by International Rectifier.
Features
Short Circuit Rated Ultra Fast IGBT
VCES = 600V
- High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
- bines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
- Lead-Free
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A n-channel
Benefits
- Latest generation 4 IGBTs offer highest power density motor controls possible
- HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
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TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 9.0 5.0 18 18 4.0 16 10 ± 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units
µs V W °C
Thermal Resistance
RθJC RθJC RθCS RθJA Wt
Parameter
Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
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