• Part: IRG4IBC20UD
  • Description: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • Category: Diode
  • Manufacturer: International Rectifier
  • Size: 230.81 KB
IRG4IBC20UD Datasheet (PDF) Download
International Rectifier
IRG4IBC20UD

Overview

  • 2.5kV, 60s insulation voltage U
  • 4.8 mm creapage distance to heatsink
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
  • Tighter parameter distribution
  • Industry standard Isolated TO-220 FullpakTM outline C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-ch an nel Benefits
  • Simplified assembly
  • Highest efficiency and power density
  • HEXFREDTM antiparallel Diode minimizes switching losses and EMI