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IRG4IBC20UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Key Features

  • 2.5kV, 60s insulation voltage U.
  • 4.8 mm creapage distance to heatsink.
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • IGBT co-packaged with.

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PD -91752A IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.