IRG4IBC20UD diode equivalent, insulated gate bipolar transistor with ultrafast soft recovery diode.
* 2.5kV, 60s insulation voltage U
* 4.8 mm creapage distance to heatsink
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >20.
e), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), t.
Image gallery
Download