IRG4IBC20KD Datasheet | International Rectifier

PD -91689A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - High switching speed optimized for up to 25kHz with low VCE(on) - Short Circuit Rating 10µs @ 125°C, VGE = 15V - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-220 FULLPAK Short Circuit Rated UltraFast IGBT VCES = 600V VCE(on) typ. = 2.27V @VGE = 15V, IC = 6.3A n-ch an nel Benefits - Generation 4 IGBTs offer highest efficiencies available maximizing the power density of the...