IRG4IBC20UD Description
PD -91752A IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4IBC20UD Key Features
- 2.5kV, 60s insulation voltage U
- 4.8 mm creapage distance to heatsink
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
- Tighter parameter distribution
- Industry standard Isolated TO-220 FullpakTM outline
- Simplified assembly
- Highest efficiency and power density
- HEXFREDTM antiparallel Diode minimizes switching losses and EMI