Part IRG4IBC20UD
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Category Diode
Manufacturer International Rectifier
Size 230.81 KB
International Rectifier

IRG4IBC20UD Overview

Key Features

  • 2.5kV, 60s insulation voltage U
  • 4.8 mm creapage distance to heatsink
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
  • Tighter parameter distribution
  • Simplified assembly
  • Highest efficiency and power density
  • HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK