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IRG4PC40UPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PC40UPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PC40UPBF
Manufacturer	International Rectifier (now Infineon)
File Size	635.59 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC40UPBF Datasheet

Overview

PD-95184 IRG4PC40UPbF INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package.
Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for spe.

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