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International Rectifier Electronic Components Datasheet

IRG4PC40WPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -95183
IRG4PC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
www.DataSheet4U.com applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and constructionoffers
tighter parameters distribution, exceptional reliability
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
04/23/04


International Rectifier Electronic Components Datasheet

IRG4PC40WPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC40WPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
www.DataSheet4U.com
Parameter
Min. Typ. Max.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.44 —
— 2.05 2.5
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 2.36 —
— 1.90 —
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — 13 —
gfe Forward Transconductance U
18 28 —
ICES
Zero Gate Voltage Collector Current
— — 250
— — 2.0
— — 2500
IGES Gate-to-Emitter Leakage Current
— — ±100
Units
V
V
V/°C
V
mV/°C
S
µA
nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 40A
See Fig.2, 5
IC = 20A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100 V, IC =20A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
— 98 147
— 12 18
— 36 54
— 27 —
— 22 —
— 100 150
— 74 110
— 0.11 —
— 0.23 —
— 0.34 0.45
— 25 —
— 23 —
— 170 —
— 124 —
— 0.85 —
— 13 —
— 1900 —
— 140 —
— 35 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 20A
VCC = 400V
VGE = 15V
See Fig.8
TJ = 25°C
IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 9,10, 14
TJ = 150°C,
IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig.10,11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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Part Number IRG4PC40WPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 9 Pages
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