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IRG4PC60F-PPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specified.

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www.DataSheet4U.com PD - 95567 IRG4PC60F-PPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specified application conditions. • Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. • Designed for best performance when used with IR HEXFRED & IR FRED companion diodes.