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International Rectifier Electronic Components Datasheet

IRG4PC60F-PPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD - 95567
IRG4PC60F-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Solder plated version of industry standard
TO-247AC package.
• Lead-Free
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
• Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
Fast Speed IGBT
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 60A
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature ‡
Max.
600
90
60
120
120
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183°C
should not exceed 100s)
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)†
Weight
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.24
–––
40
20
–––
www.irf.com
Units
V
A
V
mJ
W
°C
°C
Units
°C/W
g (oz)
1
07/15/04


International Rectifier Electronic Components Datasheet

IRG4PC60F-PPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC60F-PPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 16 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.13 —
— 1.5 1.8
V
V/°C
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 60A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
— 1.7 — V IC = 90A
See Fig.2, 5
— 1.5 —
IC = 60A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance …
36 69 — S VCE = 100V, IC = 60A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 290 340
IC = 40A
— 40 47 nC VCC = 400V
— 100 130
VGE = 15V
See Fig. 8
— 42 —
— 66 — ns TJ = 25°C
— 310 360
IC = 60A, VCC = 480V
— 170 220
VGE = 15V, RG = 5.0
— 0.30 —
Energy losses include "tail"
— 4.6 — mJ See Fig. 10, 11, 13, 14
— 4.9 6.3
— 39 —
TJ = 150°C,
— 66 —
— 470 —
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
— 300 —
Energy losses include "tail"
— 8.8 — mJ See Fig. 13, 14
— 13 — nH Measured 5mm from package
— 6050 —
VGE = 0V
— 360 —
— 66 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, Rg = 5.0W.
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
† When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
‡ Refer to application note # 1023, "Surface Mounting of
Larger Devices."
2 www.irf.com


Part Number IRG4PC60F-PPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 8 Pages
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