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IRG4PH50S-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PH50S-EPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PH50S-EPBF

Datasheet Details

Part number	IRG4PH50S-EPBF
Manufacturer	International Rectifier
File Size	216.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH50S-EPBF Datasheet
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Features

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C G E n-channel VCES =1200V VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified.

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Published: Feb 4, 2016 |