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IRG4PH50S-EPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRG4PH50S-EPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PH50S-EPBF
Manufacturer	International Rectifier (now Infineon)
File Size	216.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4PH50S-EPBF Download (PDF)

Overview

PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed.

Key Features

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C G E n-channel VCES =1200V VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified.

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