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IRG4PH50S Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4PH50S datasheet preview

Datasheet Details

Part number	IRG4PH50S
Manufacturer	IRF
File Size	130.71 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH50S_IRF.pdf

Key Features

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

IRG4PH50S-EPBF from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	IRG4PH50S-EPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PH50KDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PH50KPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PH50UDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PH50UPbF	Ultra Fast Speed IGBT	International Rectifier

More Datasheets from IRF

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IRG4PH50UD	INSULATED GATE BIPOLAR TRANSISTOR
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