IRG4PH50S - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

IRF

Part number	IRG4PH50S
Manufacturer	IRF
File Size	130.71 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH50S Datasheet
Additional preview pages of the IRG4PH50S datasheet.

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Jun 29, 2005 |