IRG4PH50S Description
PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR.
IRG4PH50S Key Features
- Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-247AC package
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's