• Part: IRG4PH50S-EPBF
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: International Rectifier
  • Size: 216.73 KB
Download IRG4PH50S-EPBF Datasheet PDF
International Rectifier
IRG4PH50S-EPBF
IRG4PH50S-EPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
PD -96225 INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free G E n-channel VCES =1200V VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR...