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IRG4PH50U Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD - 91574B IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR.

IRG4PH50U datasheet preview

Datasheet Details

Part number	IRG4PH50U
Manufacturer	IRF
File Size	134.14 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH50U_IRF.pdf

Key Features

UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode.
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
Optimized for power conversion; SMPS, UPS and welding.
Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-channel Benefits.
Higher switching frequency capability th.

IRG4PH50UDPBF from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	IRG4PH50UDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
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	IRG4PH50KPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
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