IRG4PH50UDPBF Description
PD -95190 IRG4PH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4PH50UDPBF Key Features
- UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
- New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
- Lead-Free
- Higher switching frequency capability than petitive IGBTs
- Highest efficiency available
- HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing