IRG4PH50UDPBF Datasheet | International Rectifier

.. PD -95190 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode - New IGBT design provides tighter parameter distribution and higher efficiency than previous generations - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-247AC package - Lead-Free UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-cha nn el Benefits - Higher switching frequency capability than petitive IGBTs - Highest...