IRG4PH50UPbF Description
PD - 95191 IRG4PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR.
IRG4PH50UPbF Key Features
- UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
- New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
- Optimized for power conversion; SMPS, UPS and welding
- Industry standard TO-247AC package
- Lead-Free
- Higher switching frequency capability than petitive IGBTs
- Highest efficiency available
- Much lower conduction losses than MOSFETs
- More efficient than short circuit rated IGBTs