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International Rectifier Electronic Components Datasheet

IRG7R313U Datasheet

PDP Trench IGBT

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PD - 97484
IRG7R313UPbF
PDP TRENCH IGBT
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.35
V
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C
TJ max
160
A
150
°C
l High repetitive peak current capability
l Lead Free package
C
C
G
E
n-channel
E
C
G
D-Pak
IRG7R313UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
RθJC
d Junction-to-Case
Max.
±30
40
20
160
78
31
0.63
-40 to + 150
300
Typ.
–––
Max.
1.6
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
3/31/10


International Rectifier Electronic Components Datasheet

IRG7R313U Datasheet

PDP Trench IGBT

No Preview Available !

IRG7R313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
Collector-to-Emitter Breakdown Voltage
ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient
VCE(on)
Static Collector-to-Emitter Voltage
330 ––– ––– V VGE = 0V, ICE = 250μA
––– 0.4 ––– V/°C Reference to 25°C, ICE = 1mA
––– 1.21 1.45
––– 1.35 –––
e VGE = 15V, ICE = 12A
e VGE = 15V, ICE = 20A
e 1.75 ––– V VGE = 15V, ICE = 40A
––– 2.14 –––
––– 1.41 –––
e VGE = 15V, ICE = 60A
e VGE = 15V, ICE = 20A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.2 ––– 4.7 V VCE = VGE, ICE = 1.0mA
ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient
ICES
Collector-to-Emitter Leakage Current
––– -10 ––– mV/°C
––– 1.0 10
VCE = 330V, VGE = 0V
25 150 μA VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 –––
VCE = 330V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe
Forward Transconductance
Qg
Total Gate Charge
––– 47 ––– S VCE = 25V, ICE = 12A
e ––– 33 ––– nC VCE = 240V, IC = 12A, VGE = 15V
Qgc
Gate-to-Collector Charge
––– 12 –––
td(on)
tr
td(off)
Turn-On delay time
Rise time
Turn-Off delay time
––– 1.0 –––
––– 13 –––
––– 65 –––
IC = 12A, VCC = 196V
ns RG = 10Ω, L=210μH
TJ = 25°C
tf
Fall time
––– 68 –––
td(on)
Turn-On delay time
––– 11 –––
IC = 12A, VCC = 196V
tr
td(off)
tf
tst
EPULSE
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– 14 ––– ns RG = 10Ω, L=200μH, LS= 150nH
––– 86 –––
TJ = 150°C
––– 190 –––
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1Ω
––– 480 –––
L = 220nH, C= 0.20μF, VGE = 15V
μJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 570 –––
L = 220nH, C= 0.20μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 1C
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies
Input Capacitance
Coes
Output Capacitance
––– 880 –––
––– 47 –––
VGE = 0V
pF VCE = 30V
Cres
Reverse Transfer Capacitance
––– 26 –––
ƒ = 1.0MHz
LC
Internal Collector Inductance
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
LE
Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.05, ton=2μsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400μs; duty cycle 2%.
2
www.irf.com


Part Number IRG7R313U
Description PDP Trench IGBT
Maker International Rectifier
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