IRG7R313U
Features
Key Parameters l Advanced Trench IGBT Technology
VCE min
V l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency
IRP max @ TC= 25°C TJ max
°C l High repetitive peak current capability l Lead Free package
E n-channel
D-Pak IRG7R313UPb F
G Gate
C Collector
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features bine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C
Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V c Repetitive Peak Current
Power...
