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IRG7RA13UPBF - PDP TRENCH IGBT

Datasheet Summary

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • Advanced Trench IGBT Technology.
  • Optimized for Sustain and Energy Recovery circuits in PDP.

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  PDP TRENCH IGBT IRG7RA13UPbF Key Parameters VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max C Features  Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability  Lead Free package Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability.
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