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IRG7SC28UPbF - PDP Trench IGBT

Datasheet Summary

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

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Full PDF Text Transcription

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PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min 600 cVCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C TJ max 1.70 225 150 CC V V A °C G E n-channel G Gate CE G D2Pak IRG7SC28UPbF C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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