Datasheet Summary
- 97058B
PDP TRENCH IGBT IRGB4055PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRGS4055PbF
Key Parameters
VCE min
300 cV CE(ON) typ. @ 110A
IRP max @ TC= 25°C TJ max
270 150
A °C
C CC
E n-channel
TO-220 IRGB4055DPbF
D2Pak IRGS4055DPbF
G Gate
C Collector
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM...