IRGB4056DPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 µS short circuit SOA

* Square RBSOA

* 100% of the parts tested for 4X rated current (ILM)

* Positive VCE (ON) Temperature co-efficient

IRGB4056DPBF

International Rectifier

353.41 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGB4055PBF PDP TRENCH IGBT (International Rectifier)

IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB4060DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB4061DPbF IGBT (International Rectifier)

IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB4065PBF IGBT (International Rectifier)

IRGB4086PbF PDP Trench IGBT (International Rectifier)

IRGB420 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

Image Gallery